2SB676 Todos los transistores

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2SB676 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB676

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 4000

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SB676

 

2SB676 Datasheet (PDF)

1.1. 2sb676.pdf Size:149K _jmnic

2SB676
2SB676

JMnic Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION ·With TO-220C package ·High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) ·DARLINGTON APPLICATIONS ·For switching applications ·Hammer drive, pulse motor drive applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emi

5.1. 2sb677.pdf Size:230K _inchange_semiconductor

2SB676
2SB676

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB677 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2A APPLICATIONS ·Switching applications. ·Hammer drive, pulse motor drive a

5.2. 2sb673.pdf Size:134K _inchange_semiconductor

2SB676
2SB676

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB673 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD633 APPLICATIONS ·High power switching applications.

5.3. 2sb679.pdf Size:106K _inchange_semiconductor

2SB676
2SB676

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB679 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Col

5.4. 2sb675.pdf Size:94K _inchange_semiconductor

2SB676
2SB676

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB675 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD635 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mo

5.5. 2sb674.pdf Size:94K _inchange_semiconductor

2SB676
2SB676

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB674 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD634 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mo

Otros transistores... 2SB670A , 2SB671 , 2SB671A , 2SB672 , 2SB672A , 2SB673 , 2SB674 , 2SB675 , 2SC945 , 2SB677 , 2SB678 , 2SB679 , 2SB67A , 2SB67AH , 2SB67H , 2SB68 , 2SB681 .

 


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