2SB677 Todos los transistores

 ..1. Size:213K  inchange semiconductor
 2sb677.pdf

isc Silicon PNP Darlington Power Transistor 2SB677 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -1A FE C Collector-Emitter Breakdown Voltage- V = -40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications.

 9.1. Size:149K  jmnic
 2sb676.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION With TO-220C package High DC Current Gain hFE=2000 @VCE=-2V, IC=-1A (Min.) DARLINGTON APPLICATIONS For switching applications Hammer drive, pulse motor drive applications Power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3

 9.2. Size:106K  inchange semiconductor
 2sb679.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB679 DESCRIPTION High Power Dissipation- PC= 100W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min.) Complement to Type 2SC1079 APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V

 9.3. Size:214K  inchange semiconductor
 2sb676.pdf

isc Silicon PNP Darlington Power Transistor 2SB676 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -1A FE C Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -3A CE(sat) C Complement to Type 2SD686 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

 9.4. Size:216K  inchange semiconductor
 2sb674.pdf

isc Silicon PNP Darlington Power Transistor 2SB674 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SD634 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, pulse motor drive applica

 9.5. Size:214K  inchange semiconductor
 2sb673.pdf

isc Silicon PNP Darlington Power Transistor 2SB673 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -3A FE C Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.5V(Max)@ I = -3A CE(sat) C Complement to Type 2SD633 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS H

 9.6. Size:215K  inchange semiconductor
 2sb675.pdf

isc Silicon PNP Darlington Power Transistor 2SB675 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SD635 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, pulse motor drive applica