2SB69
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB69
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 60
V
Tensión emisor-base (Veb): 1
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 75
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1
MHz
Ganancia de corriente contínua (hfe): 34
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SB69
2SB69
Datasheet (PDF)
0.1. Size:136K jmnic
2sb697 2sb697k.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION With TO-3 package Complement to type 2SD733/733K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-
0.2. Size:212K inchange semiconductor
2sb696.pdf
isc Silicon PNP Power Transistors 2SB696DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD732Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.Recommended for output stage of 60W
0.3. Size:218K inchange semiconductor
2sb690.pdf
isc Silicon PNP Power Transistor 2SB690DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SD726Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
0.4. Size:211K inchange semiconductor
2sb697.pdf
isc Silicon PNP Power Transistors 2SB697DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD733Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.Recommended for output stage of 80W
0.5. Size:123K inchange semiconductor
2sb697-k.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION With TO-3 package Complement to type 2SD733/733K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simpli
0.6. Size:215K inchange semiconductor
2sb695.pdf
isc Silicon PNP Power Transistor 2SB695DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD731Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATI
0.7. Size:215K inchange semiconductor
2sb691.pdf
isc Silicon PNP Power Transistor 2SB691DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD727Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE
0.8. Size:216K inchange semiconductor
2sb692.pdf
isc Silicon PNP Power Transistor 2SB692DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD728Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUT
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