2SB690 Todos los transistores

 ..1. Size:218K  inchange semiconductor
 2sb690.pdf

isc Silicon PNP Power Transistor 2SB690 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High Power Dissipation Complement to Type 2SD726 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.1. Size:136K  jmnic
 2sb697 2sb697k.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION With TO-3 package Complement to type 2SD733/733K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-

 9.2. Size:212K  inchange semiconductor
 2sb696.pdf

isc Silicon PNP Power Transistors 2SB696 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SD732 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. Recommended for output stage of 60W

 9.3. Size:211K  inchange semiconductor
 2sb697.pdf

isc Silicon PNP Power Transistors 2SB697 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SD733 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. Recommended for output stage of 80W

 9.4. Size:123K  inchange semiconductor
 2sb697-k.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION With TO-3 package Complement to type 2SD733/733K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simpli

 9.5. Size:215K  inchange semiconductor
 2sb695.pdf

isc Silicon PNP Power Transistor 2SB695 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD731 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATI

 9.6. Size:215K  inchange semiconductor
 2sb691.pdf

isc Silicon PNP Power Transistor 2SB691 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD727 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUTE

 9.7. Size:216K  inchange semiconductor
 2sb692.pdf

isc Silicon PNP Power Transistor 2SB692 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD728 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUT