2SB705 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simpl

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting b

isc Silicon PNP Power Transistor 2SB705DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOComplement to Type 2SD745High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsSuitable for output stages of 60~120 watts audio amplifierand vo

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting b

isc Silicon PNP Power Transistor 2SB705BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOComplement to Type 2SD745BHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuitable for output stages of 60~120 watts audio amplifierand voltage regulations.ABSOLUTE MAXIMUM RATINGS(T =25

Transistor2SB709ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD601A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratin

Transistors2SB0709A (2SB709A)Silicon PNP epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SD0601A (2SD601A)0.40+0.100.050.16+0.100.063 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazine(0.95) (0.95)packi

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2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 For general amplification A Complementary of the 2SD601A L33Top ViewC BCLASSIFICATION OF hFE 11 2Product-Rank 2SB709A-Q 2SB709A-R 2SB709A-S 2K ERange 160~260 210~340 290~460

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB709A TRANSISTOR (PNP) FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO

JMnic Product Specification Silicon PNP Power Transistors 2SB707 2SB708 DESCRIPTION With TO-220C package Complement to type 2SD568/569 APPLICATIONS For low frequency power amplifier low speed switching industrial use PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

2SB7 09ATRANSISTOR(PNP) SOT-23 FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -7 VCollector Current -Continuous IC -100 mACollector Power

2SB709A SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features For general amplification Complementary to 2SD601A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO -45 V Dimensions in inches and (millimeters)Emitter-Base Voltage VEBO -7 VCollector Curre

SMD Type TransistorsPNP Transistors2SB709ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 For general amplification Complimentary to 2SD601A.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage

2SB709LT1 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER Package:SOT-23 * Complement to 2SD601LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -50 V PIN: 1 2 3Collector-Emitter Voltage Vceo -45 V STYLE Emitter-Base Voltage Vebo -5

isc Silicon PNP Power Transistor 2SB703DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEODC Current Gain-: h = 40~200 @I = -0.5AFE CComplement to Type 2SD743Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifier, lowspeed switching applications.ABSOL

isc Silicon PNP Power Transistor 2SB707DESCRIPTIONHigh Collector Current: I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CComplement to Type 2SD568Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-speedswitching applications.ABSOLUTE MAXIMUM

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB707 2SB708 DESCRIPTION With TO-220C package Complement to type 2SD568/569 APPLICATIONS For low frequency power amplifier low speed switching industrial use PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PAR

isc Silicon PNP Power Transistor 2SB708DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CComplement to Type 2SD569Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-speedswitching applications.ABSOLUTE MAXIMU