2SB725 Todos los transistores

 9.1. Size:39K  panasonic
 2sb726 e.pdf

Transistor 2SB726 Silicon PNP epitaxial planer type For general amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 80 V 1.27 1

 9.2. Size:53K  panasonic
 2sb726.pdf

Transistor 2SB0726 (2SB726) Silicon PNP epitaxial planer type For general amplification Unit mm Features High foward current transfer ratio hFE. High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Collector curr

 9.3. Size:37K  hitachi
 2sb727.pdf

2SB727(K) Silicon PNP Epitaxial Application Medium speed and power switching complementary pair with 2SD768(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 1 k 400 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage

 9.4. Size:186K  jmnic
 2sb727k.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB727K DESCRIPTION With TO-220C package Complement to type 2SD768K DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

 9.5. Size:216K  inchange semiconductor
 2sb720.pdf

isc Silicon PNP Power Transistor 2SB720 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD760 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

 9.6. Size:206K  inchange semiconductor
 2sb722.pdf

isc Silicon PNP Power Transistors 2SB722 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Power Dissipation- P = 150W(Max)@T =25 C C High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 9.7. Size:187K  inchange semiconductor
 2sb724.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB724 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applica

 9.8. Size:214K  inchange semiconductor
 2sb727.pdf

isc Silicon PNP Darlington Power Transistor 2SB727 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -3A CE(sat) C Complement to Type 2SD768 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

 9.9. Size:211K  inchange semiconductor
 2sb723.pdf

isc Silicon PNP Power Transistors 2SB723 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO High Power Dissipation- P = 150W(Max)@T =25 C C High Current Capability Complement to Type 2SD753 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIM