2SB743 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB743DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -30V(Min.)(BR)CEOLow Collector to Emitter Saturation Voltage: V = -2.0V(Max.)@I = -1.5ACE(sat) CExcellent h linearityFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Transistor2SB745, 2SB745ASilicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SD661 and 2SD661A6.9 0.1 2.5 0.11.5Features 1.5 R0.9 1.0R0.9 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit b

Transistor2SB745, 2SB745ASilicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SD661 and 2SD661A6.9 0.1 2.5 0.11.5Features 1.5 R0.9 1.0R0.9 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit b

JMnic Product Specification Silicon PNP Power Transistors 2SB744 2SB744A DESCRIPTION With TO-126 package Complement to type 2SD794/794A Excellent hFE linearity APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER C

isc Silicon PNP Power Transistor 2SB744DESCRIPTIONHigh Collector Current -I = -3ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOComplement to Type 2SD794Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SB747DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD812Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.Suitable for 15~20W home stereo output amplifier