2SB747 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor 2SB747 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD812 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. Suitable for 15 20W home stereo output amplifier

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SD661 and 2SD661A 6.9 0.1 2.5 0.1 1.5 Features 1.5 R0.9 1.0 R0.9 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit b

Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SD661 and 2SD661A 6.9 0.1 2.5 0.1 1.5 Features 1.5 R0.9 1.0 R0.9 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit b

JMnic Product Specification Silicon PNP Power Transistors 2SB744 2SB744A DESCRIPTION With TO-126 package Complement to type 2SD794/794A Excellent hFE linearity APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER C

isc Silicon PNP Power Transistor 2SB744 DESCRIPTION High Collector Current -I = -3A C Collector-Emitter Breakdown Voltage- V = -45V(Min) (BR)CEO Complement to Type 2SD794 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB743 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -30V(Min.) (BR)CEO Low Collector to Emitter Saturation Voltage V = -2.0V(Max.)@I = -1.5A CE(sat) C Excellent h linearity FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power