2SB776D
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB776D
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 120
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8
MHz
Capacitancia de salida (Cc): 200
pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar 2SB776D
2SB776D
Datasheet (PDF)
8.1. Size:201K utc
2sb776.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB776 PNP PLANAR TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High Current Output Up to 3A * Low Saturation Voltage * Complement to 2SD886 ORDERING INFORMATION Ordering N
8.2. Size:260K jiangsu
2sb776.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors2SB776 TRANSISTOR (PNP)TO-126FEATURES High Current Output Up to 3A 1. EMITTER Low Saturation Voltage Power Dissipation 2. COLLECTOR3. BASE Equivalent Circuit B776=Device code Solid dot = Green molding compound device, if none, the normal device B776 XXXX=Code
8.3. Size:209K jmnic
2sb776.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB776 DESCRIPTION With TO-3PN package Complement to type 2SD896 Wide area of safe operation APPLICATIONS 100V/7A, AF 40W output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Tc=25)
8.4. Size:164K lge
2sb776.pdf
2SB776(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High current output up to 3A Low saturation voltage Power dissipation 2.5007.4002.9001.1007.8001.500MAXIMUM RATINGS (TA=25 unless otherwise noted ) 3.900Symbol Parameter Value Units3.0004.100VCBO Collector-Base Voltage -50 V 10.600 3.2000.0000.300VCEO Collec
8.5. Size:170K wietron
2sb776 2sd886.pdf
2SB7762SD8862SB776 PNP Epitaxial Planar Transistors2SD886 NPN Epitaxial Planar TransistorsTO-1261.EMITTERP b Lead(Pb)-Free2.COLLECTOR3.BASE123ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/2SB776 UnitNPN/2SD886VCEO -50 50 VCollector-Emitter VoltageVCBO -50 50 VCollector-Base VoltageVEBO -5.0 5.0 VEmitter-Base VoltageIC -3.0 3.0 ACollector Curren
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