2SB782 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB782 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applica

Transistors 2SB0789, 2SB0789A (2SB789, 2SB789A) Silicon PNP epitaxial planar type Unit mm For low-frequency driver amplification 4.5 0.1 1.6 0.2 1.5 0.1 Features High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC 1 23 0.4 0.08 0.5 0.08 0.4 0.04 1.5 0.1 Absolute Maximum Ratings Ta = 25 C 3 Parameter Symbol Rating Unit 2

Transistor 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD958 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolu

Transistors 2SB0788 (2SB788) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD0958 (2SD958) 2.5 0.1 6.9 0.1 (1.0) (1.5) (1.5) Features R 0.9 High collector-emitter voltage (Base open) VCEO R 0.7 Low noise voltage NV M type package allowing easy automatic and manual insertion as well as stand-alone

Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SD968 and 2SD968A 1.5 0.1 4.5 0.1 Features 1.6 0.2 High collector to emitter voltage VCEO. Large collector power dissipation PC. 45 Absolute Maximum Ratings (Ta=25 C) 0.4 0.08 0.4 0.04 Parameter Symbol Ratings Unit 0.5 0.08 1.5 0.1 Co

SMD Type Transistors PNP Transistors 2SB789 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-100V Complementary to 2SD968 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -100 Collector - Emitter Voltage VCE

SMD Type Transistors PNP Transistors 2SB789A SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-120V Complementary to 2SD968A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage V

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB783 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applica

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB781 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Good Linearity of h FE Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applica

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB786 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40V(Min) CEO(SUS) High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -0.5A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed switching