2SB783 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB783DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applica

Transistors2SB0789, 2SB0789A (2SB789, 2SB789A)Silicon PNP epitaxial planar typeUnit: mmFor low-frequency driver amplification4.50.11.60.2 1.50.1 Features High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC1 230.40.08 0.50.08 0.40.041.50.1 Absolute Maximum Ratings Ta = 25C3Parameter Symbol Rating Unit2

Transistor2SB788Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD9586.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Low noise voltage NV.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolu

Transistors2SB0788 (2SB788)Silicon PNP epitaxial planar typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD0958 (2SD958) 2.50.16.90.1(1.0)(1.5)(1.5) FeaturesR 0.9 High collector-emitter voltage (Base open) VCEOR 0.7 Low noise voltage NV M type package allowing easy automatic and manual insertion aswell as stand-alone

Transistor2SB789, 2SB789ASilicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SD968 and 2SD968A1.5 0.14.5 0.1Features1.6 0.2High collector to emitter voltage VCEO.Large collector power dissipation PC.45Absolute Maximum Ratings (Ta=25C)0.4 0.080.4 0.04Parameter Symbol Ratings Unit0.5 0.081.5 0.1Co

SMD Type TransistorsPNP Transistors2SB789SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-100V Complementary to 2SD9680.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -100 Collector - Emitter Voltage VCE

SMD Type TransistorsPNP Transistors2SB789ASOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-120V Complementary to 2SD968A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage V

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB781DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOGood Linearity of hFEFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applica

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB782DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applica

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB786DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -0.5A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswitching