2SB796 Datasheet. Equivalente

 ..1. Size:178K  inchange semiconductor
 2sb796.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB796 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -200V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -5A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a

 9.1. Size:221K  nec
 2sb798.pdf

 9.2. Size:212K  nec
 2sb799.pdf

 9.3. Size:149K  nec
 2sb794 2sb795.pdf

 9.4. Size:42K  panasonic
 2sb790 e.pdf

Transistor 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD969 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta

 9.5. Size:41K  panasonic
 2sb792 e.pdf

Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD814 +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High collector to emitter voltage VCEO. Low noise voltage NV. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packin

 9.6. Size:37K  panasonic
 2sb790.pdf

Transistor 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD969 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta

 9.7. Size:37K  panasonic
 2sb792a.pdf

Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD814 +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High collector to emitter voltage VCEO. Low noise voltage NV. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packin

 9.8. Size:175K  utc
 2sb798.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SB798 P NP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION 1 The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage VCE(sat)

 9.9. Size:37K  hitachi
 2sb791.pdf

2SB791(K) Silicon PNP Epitaxial Application Medium speed and power switching complementary pair with 2SD970(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 2 k 200 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage

 9.10. Size:64K  no
 2sb793.pdf

 9.11. Size:159K  jmnic
 2sb795.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB794 2SB795 DESCRIPTION With TO-126 package DARLINGTON High DC current gain Low collector saturation voltage Complement to type 2SD985 2SD986 APPLICATIONS For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2

 9.12. Size:163K  jmnic
 2sb794.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB794 2SB795 DESCRIPTION With TO-126 package DARLINGTON High DC current gain Low collector saturation voltage Complement to type 2SD985 2SD986 APPLICATIONS For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2

 9.13. Size:1353K  kexin
 2sb798.pdf

SMD Type Transistors PNP Transistors 2SB798 1.70 0.1 Features Low Collector Saturation Voltage VCE(sat)

 9.14. Size:1129K  kexin
 2sb799.pdf

SMD Type Transistors PNP Transistors 2SB799 1.70 0.1 Features Low Collector Saturation Voltage VCE(sat)

 9.15. Size:894K  kexin
 2sb792.pdf

SMD Type Transistors PNP Transistors 2SB792 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High collector to emitter voltage VCEO. Low noise voltage NV 1 2 Complimentary to 2SD814. +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Volta

 9.16. Size:903K  kexin
 2sb792a.pdf

SMD Type Transistors PNP Transistors 2SB792A SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features High collector to emitter voltage VCEO. Low noise voltage NV 1 2 Complimentary to 2SD814A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Volt

 9.17. Size:385K  cn shikues
 2sb799.pdf

2SB799 PNP-Silicon General use Transistors 4 1W 1.5A 25V Applications Can be used for switching and amplifying in various 2 1 3 electrical and electronic circuit. SOT-89 Maximum ratings Parameters Symbol Rating Unit Marking V VCEO 25 Collector-emitter voltage (IB=0) 2SB799=HD VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0

 9.18. Size:835K  cn shikues
 2sb798dl 2sb798dk.pdf

2SB798 PNP-Silicon General use Transistors 4 1W 1.0A 25V 3 2 1 2 1 3 SOT-89 Applications Can be used for switching and amplifying in various 1 Base 2/4 Collector 3 Emitter electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 30 V Collector-base voltage IE=0 VEBO 6 V Emitter-

 9.19. Size:216K  inchange semiconductor
 2sb791.pdf

isc Silicon PNP Darlington Power Transistor 2SB791 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = -4A FE C Low Saturation Voltage Complement to Type 2SD970 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed and power switching appl

 9.20. Size:189K  inchange semiconductor
 2sb795.pdf

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB795 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -1A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max.) @I = -1A CE(sat) C Built-in a dumper diode at C-E Complement to Type 2SD986 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

 9.21. Size:189K  inchange semiconductor
 2sb794.pdf

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB794 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -1A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max.) @I = -1A CE(sat) C Built-in a dumper diode at C-E Complement to Type 2SD985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO