2N1612 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N1612
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 4.5 W
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO37
Búsqueda de reemplazo de transistor bipolar 2N1612
2N1612 Datasheet (PDF)
2n1613.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1613NPN medium power transistor1997 Apr 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1613FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emitt
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2n1616.pdf
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2n1618.pdf
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2n1617.pdf
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2n1613.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSCollector Emitter Voltage (RBE
Otros transistores... 2N1606 , 2N1607 , 2N1608 , 2N1609 , 2N160A , 2N161 , 2N1610 , 2N1611 , 2SD2012 , 2N1613 , 2N1613-46 , 2N1613A , 2N1613B , 2N1613L , 2N1613S , 2N1614 , 2N1615 .
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