2SB813 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor 2SB813DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle

Ordering number : ENN694F2SB815 / 2SD1048PNP / NPN Epitaxial Planar Silicon Transistors2SB815 / 2SD1048General-Purpose AF Amplifier ApplicationsFeaturesPackage Dimensions Ultrasmall package allows miniaturizationunit : mmin end products.2018B Large current capacity (IC=0.7A) and low-saturation[2SB815 / 2SD1048]voltage.0.40.1630 to 0.11 0.95 0.95 21.9

Ordering number : ENN65722SB817P / 2SD1047P2SB817P : PNP Epitaxial Planar Silicon Transistor2SD1047P : NPN Triple Diffused Planar Silicon Transistor2SB817P / 2SD1047P140V / 12A, AF80W Output ApplicationsFeaturesPackage Dimensions Capable of being mounted easily because of one- unit : mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817P

Ordering number : EN694H2SB815/2SD1048Bipolar Transistorhttp://onsemi.com() () ( ) ( )15V, 0.7A, Low VCE sat , PNP NPN Single CPFeatures Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage( ): 2SB815Specifications Absolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCol

Transistor2SB819Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD10516.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5

Transistor2SB819Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD10516.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5

JMnic Product Specification Silicon PNP Power Transistors 2SB817 DESCRIPTION With TO-3PN package Complement to type 2SD1047 APPLICATIONS 140V/12A AF 60W output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS

JMnic Product Specification Silicon PNP Power Transistors 2SB816 DESCRIPTION With TO-3PN package Complement to type 2SD1046 Wide area of safe operation APPLICATIONS For LF Power Amplifier, 50W Output Large Power Switching Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitte

Ordering number : ENN69872SB817C/2SD1047CPNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SB817C/2SD1047C140V / 12A, AF 80W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SB817C/2SD1047C]15.63.24.814.02.0

SMD Type TransistorsPNP Transistors2SB815SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 Large current capacity (IC=0.7A) and low-saturation voltage. Complimentary to 2SD1048.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SB817DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047APPLICATIONSRecommend for 60W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon PNP Power Transistor 2SB812DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SD1032Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB817EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047EMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB817CDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max.) @I = -5ACE(sat) CGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier outputstage a

isc Silicon PNP Power Transistor 2SB817DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage

isc Silicon PNP Power Transistor 2SB816DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1046Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF power amplifier, 50W output large powerswitching applications.ABS