2SB814 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB814
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 100 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 260
Encapsulados: TO236
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2SB814 datasheet
9.1. Size:239K sanyo
2sb815 2sd1048.pdf 
Ordering number ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9
9.2. Size:30K sanyo
2sb817p 2sd1047p 2sd1047p.pdf
Ordering number ENN6572 2SB817P / 2SD1047P 2SB817P PNP Epitaxial Planar Silicon Transistor 2SD1047P NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P
9.4. Size:190K onsemi
2sb815 2sd1048.pdf
Ordering number EN694H 2SB815/2SD1048 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 15V, 0.7A, Low VCE sat , PNP NPN Single CP Features Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage ( ) 2SB815 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Col
9.5. Size:51K panasonic
2sb819 e.pdf
Transistor 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1051 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5
9.6. Size:47K panasonic
2sb819.pdf
Transistor 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1051 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5
9.7. Size:199K jmnic
2sb817.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB817 DESCRIPTION With TO-3PN package Complement to type 2SD1047 APPLICATIONS 140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS
9.8. Size:241K jmnic
2sb816.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB816 DESCRIPTION With TO-3PN package Complement to type 2SD1046 Wide area of safe operation APPLICATIONS For LF Power Amplifier, 50W Output Large Power Switching Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitte
9.9. Size:445K sanken-ele
2sb817c 2sd1047c.pdf
Ordering number ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0
9.10. Size:960K kexin
2sb815.pdf
SMD Type Transistors PNP Transistors 2SB815 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 Large current capacity (IC=0.7A) and low-saturation voltage. Complimentary to 2SD1048. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO
9.11. Size:196K cn sptech
2sb817d 2sb817e.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB817 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SD1047 APPLICATIONS Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
9.12. Size:220K inchange semiconductor
2sb812.pdf
isc Silicon PNP Power Transistor 2SB812 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High Power Dissipation Complement to Type 2SD1032 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
9.13. Size:195K inchange semiconductor
2sb817e.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB817E DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SD1047E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency
9.14. Size:195K inchange semiconductor
2sb817c.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB817C DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max.) @I = -5A CE(sat) C Good Linearity of h FE High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier output stage a
9.15. Size:222K inchange semiconductor
2sb817.pdf
isc Silicon PNP Power Transistor 2SB817 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SD1047 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage
9.16. Size:212K inchange semiconductor
2sb813.pdf
isc Silicon PNP Power Transistor 2SB813 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle
9.17. Size:219K inchange semiconductor
2sb816.pdf
isc Silicon PNP Power Transistor 2SB816 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1046 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF power amplifier, 50W output large power switching applications. ABS
Otros transistores... 2SB808F, 2SB808G, 2SB81, 2SB810, 2SB811, 2SB812, 2SB812A, 2SB813, TIP31, 2SB815, 2SB815B6, 2SB815B7, 2SB816, 2SB816D, 2SB816E, 2SB817, 2SB817D
