2SB822. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB822 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB822
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.75 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100(typ) MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: FTR

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2SB822 datasheet

..1. Size:130K rohm
2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf pdf_icon

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188

9.1. Size:395K 1
2sb821 2sb1276.pdf pdf_icon

9.2. Size:98K sanyo
2sb828.pdf pdf_icon

9.3. Size:113K sanyo
2sb824.pdf pdf_icon

9.4. Size:102K sanyo
2sb827 2sd1063.pdf pdf_icon

Ordering number 688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions Universal high current switching as solenoid driving, unit mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features Low collector-to-emitter saturation voltage VCE(sat)=( )0.4V max. Wide ASO. 1 Base 2 Co

9.5. Size:1246K rohm
2sb737 2sb821.pdf pdf_icon

9.6. Size:213K jmnic
2sb828.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION With TO-3PN package Complement to type 2SD1064 Low collector saturation voltage Wide area of safe operation APPLICATIONS Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2

9.7. Size:263K jmnic
2sb829.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB829 DESCRIPTION With TO-3PN package Complement to type 2SD1065 Wide area of safe operation Low collector saturation voltage VCE(sat) = 0.5V max. APPLICATIONS Relay drivers, High-speed inverters,converters General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector

9.8. Size:206K jmnic
2sb824.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SD1060 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting

9.9. Size:229K jmnic
2sb826.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB826 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD1062 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, converters General high-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mou

9.10. Size:241K jmnic
2sb827.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB827 DESCRIPTION With TO-3PN package Complement to type 2SD1063 Wide area of safe operation Low collector-emitter saturation voltage VCE(sat)=( )0.4V max. APPLICATIONS Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION 1 Base Col

9.11. Size:204K jmnic
2sb825.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SD1061 APPLICATIONS Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum

9.12. Size:220K inchange semiconductor
2sb828.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB828 DESCRIPTION High Collector Current I = -12A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,converters, and o

9.13. Size:221K inchange semiconductor
2sb829.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB829 DESCRIPTION High Collector Current I = -15A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -8A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,converters, and oth

9.14. Size:218K inchange semiconductor
2sb824.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB824 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -0.4V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1060 APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other gereral large-current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

9.15. Size:187K inchange semiconductor
2sb823.pdf pdf_icon

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB823 DESCRIPTION Collector-Emitter Breakdown Voltage V = -100V(Min) (BR)CEO Low Collector Saturation Voltage V = -1.5V(Max)@I = -6A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and

9.16. Size:217K inchange semiconductor
2sb826.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB826 DESCRIPTION High Collector Current I = -12A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1062 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and

9.17. Size:221K inchange semiconductor
2sb827.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB827 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.4V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1063 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Universal high current switching as solenoid driving, high speed i

9.18. Size:217K inchange semiconductor
2sb825.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB825 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.4V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1061 APPLICATIONS Universal high current switching as solenoid driving, high speed inverter and converter. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

Otros transistores... 2SB817 , 2SB817D , 2SB817E , 2SB818 , 2SB819 , 2SB82 , 2SB820 , 2SB821 , D880 , 2SB823 , 2SB824 , 2SB824Q , 2SB824R , 2SB824S , 2SB825 , 2SB825Q , 2SB825R .