2SB824 Todos los transistores

JMnic Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SD1060 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting

isc Silicon PNP Power Transistor 2SB824 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -0.4V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1060 APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other gereral large-current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

Ordering number 688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions Universal high current switching as solenoid driving, unit mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features Low collector-to-emitter saturation voltage VCE(sat)=( )0.4V max. Wide ASO. 1 Base 2 Co

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188

JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION With TO-3PN package Complement to type 2SD1064 Low collector saturation voltage Wide area of safe operation APPLICATIONS Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2

JMnic Product Specification Silicon PNP Power Transistors 2SB829 DESCRIPTION With TO-3PN package Complement to type 2SD1065 Wide area of safe operation Low collector saturation voltage VCE(sat) = 0.5V max. APPLICATIONS Relay drivers, High-speed inverters,converters General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector

JMnic Product Specification Silicon PNP Power Transistors 2SB826 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD1062 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, converters General high-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mou

JMnic Product Specification Silicon PNP Power Transistors 2SB827 DESCRIPTION With TO-3PN package Complement to type 2SD1063 Wide area of safe operation Low collector-emitter saturation voltage VCE(sat)=( )0.4V max. APPLICATIONS Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION 1 Base Col

JMnic Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SD1061 APPLICATIONS Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum

isc Silicon PNP Power Transistor 2SB828 DESCRIPTION High Collector Current I = -12A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,converters, and o

isc Silicon PNP Power Transistor 2SB829 DESCRIPTION High Collector Current I = -15A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -8A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,converters, and oth

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB823 DESCRIPTION Collector-Emitter Breakdown Voltage V = -100V(Min) (BR)CEO Low Collector Saturation Voltage V = -1.5V(Max)@I = -6A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and

isc Silicon PNP Power Transistor 2SB826 DESCRIPTION High Collector Current I = -12A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1062 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and

isc Silicon PNP Power Transistor 2SB827 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.4V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1063 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Universal high current switching as solenoid driving, high speed i

isc Silicon PNP Power Transistor 2SB825 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.4V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1061 APPLICATIONS Universal high current switching as solenoid driving, high speed inverter and converter. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U