2SB831 Todos los transistores

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

SMD Type Transistors PNP Transistors 2SB831 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-0.7A 1 2 Collector Emitter Voltage VCEO=-20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 Complementary to 2SD1101 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

Transistor 2SB835 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45

UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB834L-x-AB3-R 2SB834G-x-AB3-R SOT-89 B C E Tape Reel 2SB834L-x-T60-K 2SB834G-x-T60-K TO-126 E C B Bulk 2SB834L-x-TA3-T 2SB834G-x-T

A A A

2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free ITO-220J FEATURES Power switching applications B N D E CLASSIFICATION OF hFE Product-Rank 2SB834-O 2SB834-Y M A 60 120 100 200 Range H J C K G Collector L L F 2 Millimeter Millimeter REF. REF. Min. M

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SB834 TRANSISTOR (PNP) TO-220-3L FEATURES 1. BASE Low Collector -Emitter Saturation Voltage 2. COLLECTOR VCE(sat)=1.0V(Max)@ IC=-3A,IB=-0.3A DC current Gain 3. EMITTER hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (Ta=25 unless otherwise noted)

JMnic Product Specification Silicon PNP Power Transistors 2SB834 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD880 APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC

2SB834(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A DC current Gain hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO -60 V

2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 Features 1 BASE 2 * DC Current Gain hFE = 60-200 @IC = 0.5A 3 1 * Low VCE(sat) 1.0V(MAX) @IC = 3.0A, IB = 0.3A 1. BASE 2. COLLECTOR * Complememtary to NPN 2SD880 3. EMITTER 3 TO-220 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit VCBO Collector to Base Voltage -60 V VC

PNP PNP Epitaxial Silicon Transistor R 2SB834 APPLICATIONS Audio frequency power amplifer applications FEATURES High DC Current Gain 2SD880 Complementary to 2SD880 RoHS RoHS product Package TO-220 TO-220C ORDER MESSAGE

2SB834(3CA834) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency power amplifier applications. , 2SD880(3DD880) Features Low collector saturation voltage, collector power dissipation, complementary to 2SD880(3DD880) /Absolute maximum ratings(Ta=25 )

isc Silicon PNP Power Transistor 2SB834 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.0V(Max) @I = -3.0A CE(sat) C Complementary to 2SD880 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier applicati