2SB831B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

SMD Type TransistorsPNP Transistors2SB831SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.7A1 2 Collector Emitter Voltage VCEO=-20V+0.1+0.050.95 -0.1 0.1 -0.01+0.1 Complementary to 2SD11011.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

Transistor2SB835Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45

UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB834L-x-AB3-R 2SB834G-x-AB3-R SOT-89 B C E Tape Reel2SB834L-x-T60-K 2SB834G-x-T60-K TO-126 E C B Bulk2SB834L-x-TA3-T 2SB834G-x-T

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2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free ITO-220J FEATURES Power switching applications B NDECLASSIFICATION OF hFE Product-Rank 2SB834-O 2SB834-Y M A60~120 100~200 Range H J CKGCollector L L F2 Millimeter Millimeter REF. REF. Min. M

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SB834 TRANSISTOR (PNP) TO-220-3L FEATURES 1. BASE Low Collector -Emitter Saturation Voltage 2. COLLECTOR VCE(sat)=1.0V(Max)@ IC=-3A,IB=-0.3A DC current Gain 3. EMITTER hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (Ta=25 unless otherwise noted)

JMnic Product Specification Silicon PNP Power Transistors 2SB834 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD880 APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC

2SB834(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A DC current Gain hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO -60 V

2SB834PNP Silicon Epitaxial Power TransistorP b Lead(Pb)-FreeCOLLECTOR2 Features:1BASE2* DC Current Gain hFE = 60-200 @IC = 0.5A31* Low VCE(sat) 1.0V(MAX) @IC = 3.0A, IB = 0.3A1. BASE2. COLLECTOR* Complememtary to NPN 2SD8803. EMITTER3TO-220EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Value UnitVCBOCollector to Base Voltage-60 VVC

PNP PNP Epitaxial Silicon Transistor R2SB834 APPLICATIONS Audio frequency power amplifer applications FEATURES High DC Current Gain 2SD880 Complementary to 2SD880 RoHS RoHS product Package TO-220 TO-220C ORDER MESSAGE

2SB834I(BR3CA834I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features , 2SD880I(BR3DD880I) Low collector saturation voltage, collector power dissipation, complementary to2SD880I(BR3DD880I). / Applications

2SB834(3CA834) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency power amplifier applications. :, 2SD880(3DD880) Features: Low collector saturation voltage, collector power dissipation, complementary to 2SD880(3DD880) /Absolute maximum ratings(Ta=25)

isc Silicon PNP Power Transistor 2SB834DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -3.0ACE(sat) CComplementary to 2SD880Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifierapplicati