2SB856 Todos los transistores

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2SB856 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB856

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 17 MHz

Ganancia de corriente contínua (hfe): 35

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SB856

 

2SB856 Datasheet (PDF)

1.1. 2sb856.pdf Size:323K _hitachi

2SB856
2SB856

1.2. 2sb856.pdf Size:266K _inchange_semiconductor

2SB856
2SB856

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB856 DESCRIPTION ·Collector Current: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector

5.1. 2sb857-c.pdf Size:275K _update

2SB856
2SB856



5.2. 2sb857-b.pdf Size:275K _update

2SB856
2SB856



5.3. 2sb857-d.pdf Size:275K _update

2SB856
2SB856



5.4. 2sb852k.pdf Size:67K _rohm

2SB856
2SB856

2SB852K Transistors High-gain Amplifier Transistor (-32V, -0.3A) 2SB852K External dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain. 2SB852K 2) Built-in 4k? resistor between base and emitter. 2.9 1.1 3) Complements the 2SD1383K. 0.4 0.8 (3) Packaging specifications Type 2SB852K (2) (1) Package SMT3 0.95 0.95 0.15 hFE B 1.9 Marking U

5.5. 2sb852k 2sa830s 2sd1383k 2sc1645s.pdf Size:52K _rohm

2SB856
2SB856

2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are

5.6. 2sb851 2sb1278.pdf Size:114K _rohm

2SB856
2SB856

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.7. 2sb857.pdf Size:169K _utc

2SB856
2SB856

UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. Lead-free: 2SB857L Halogen-free:2SB857G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 2SB857-x-T6C-K 2SB857L-x-T6C-K 2SB857G-x-T6C-K TO-126C E C B Bulk 2SB857-x-TA3-T 2SB857L-x-TA3-T 2SB857G-x

5.8. 2sb857.pdf Size:42K _hitachi

2SB856
2SB856

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.9. 2sb858.pdf Size:42K _hitachi

2SB856
2SB856

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.10. 2sb859.pdf Size:32K _hitachi

2SB856
2SB856

2SB859 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1135 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Collector current IC 4 A Collector

5.11. 2sb857 2sb858.pdf Size:32K _hitachi

2SB856
2SB856

2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage VEBO

5.12. 2sb859.pdf Size:188K _jmnic

2SB856
2SB856

JMnic Product Specification Silicon PNP Power Transistors 2SB859 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD1135 APPLICATIONS ·Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -1

5.13. 2sb857 2sb858.pdf Size:234K _jmnic

2SB856
2SB856

JMnic Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD1133/1134 APPLICATIONS ·Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Ope

5.14. 2sb855.pdf Size:237K _inchange_semiconductor

2SB856
2SB856

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB855 DESCRIPTION ·Collector Current: IC= -2A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector

5.15. 2sb859.pdf Size:151K _inchange_semiconductor

2SB856
2SB856

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB859 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD1135 APPLICATIONS ·Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag

5.16. 2sb857 2sb858.pdf Size:171K _inchange_semiconductor

2SB856
2SB856

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD1133/1134 APPLICATIONS ·Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector

Otros transistores... 2SB850A , 2SB851 , 2SB852 , 2SB852UA , 2SB852UB , 2SB853 , 2SB854 , 2SB855 , A733 , 2SB856A , 2SB856B , 2SB856C , 2SB857 , 2SB857B , 2SB857C , 2SB857D , 2SB858 .

 


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