2N1617 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N1617
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO61
Búsqueda de reemplazo de transistor bipolar 2N1617
2N1617 Datasheet (PDF)
2n1617.pdf
2N1617MECHANICAL DATADimensions in mm (inches)NPN SILICON TRANSISTOR ! Bipolar Power Transistor TO61 Hermetic Package High Current Switching LF Large Signal Amplification TO61 Metal Package.Pin 1 Emitter Pin 2 Base Case CollectorABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless
2n1613.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1613NPN medium power transistor1997 Apr 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1613FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emitt
2n1613 2n1711 2n1893.pdf
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2n1616.pdf
2N1616MECHANICAL DATADimensions in mm (inches)NPN SILICON TRANSISTOR ! Bipolar Power Transistor TO61 Hermetic Package High Current Switching LF Large Signal Amplification TO61 Metal Package.Pin 1 Emitter Pin 2 Base Case CollectorABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless
2n1618.pdf
2N1618SEMELABMECHANICAL DATADimensions in mm (inches)NPN SILICON TRANSISTOR ! Bipolar Power Transistor TO61 Hermetic Package High Current Switching LF Large Signal Amplification TO61 Metal Package.Pin 1 Emitter Pin 2 Base Case CollectorABSOLUTE MAXIMUM RATINGS (Tcase = 2
2n1613.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSCollector Emitter Voltage (RBE
Otros transistores... 2N1613B , 2N1613L , 2N1613S , 2N1614 , 2N1615 , 2N1616 , 2N1616-1 , 2N1616A , 2N5551 , 2N1617-1 , 2N1617A , 2N1618 , 2N1618-1 , 2N1618A , 2N1619 , 2N161A , 2N162 .
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