2SB857 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB857
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 7.5 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar 2SB857

2SB857 Datasheet (PDF)

..1. Size:228K utc
2sb857.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB857L-x-T60-K 2SB857G-x-T60-K TO-126 E C B Bulk2SB857L-x-T6C-K 2SB857G-x-T6C-K TO-126C E C B Bulk2SB857L-x-TA3-T 2SB857G-x-TA3-T TO-220 B C E Tu

..2. Size:42K hitachi
2sb857 2sb858.pdf

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

..3. Size:32K hitachi
2sb857 2sb858.pdf

2SB857, 2SB858Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SD1133 and 2SD1134OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SB857 2SB858 UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage VCEO 50 60 VEmitter to base

..4. Size:234K jmnic
2sb857 2sb858.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag

..5. Size:44K cn haohai electr
hsb857 2sb857.pdf

Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.10.07MICROELECTRONICS CORP.Page No. : 1/4HSB857 / 2SB857PNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ....................................................................................

..6. Size:171K inchange semiconductor
2sb857 2sb858.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Coll

..7. Size:217K inchange semiconductor
2sb857.pdf

isc Silicon PNP Power Transistor 2SB857DESCRIPTIONCollector Current: I = -4ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD1133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M

0.1. Size:275K mcc
2sb857-c.pdf