2SB858C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB858C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 7.5 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO220

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2SB858C datasheet

 8.1. Size:42K  hitachi
 2sb857 2sb858.pdf pdf_icon

2SB858C

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.2. Size:32K  hitachi
 2sb857 2sb858.pdf pdf_icon

2SB858C

2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base

 8.3. Size:234K  jmnic
 2sb857 2sb858.pdf pdf_icon

2SB858C

JMnic Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag

 8.4. Size:171K  inchange semiconductor
 2sb857 2sb858.pdf pdf_icon

2SB858C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll

MOSTRAR MÁS

Otros transistores... 2SB856B, 2SB856C, 2SB857, 2SB857B, 2SB857C, 2SB857D, 2SB858, 2SB858B, 2SA1837, 2SB858D, 2SB859, 2SB859B, 2SB859C, 2SB86, 2SB860, 2SB861, 2SB861B