2SB859C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB859C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO220

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2SB859C datasheet

 8.1. Size:32K  hitachi
 2sb859.pdf pdf_icon

2SB859C

2SB859 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1135 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Collector current IC 4

 8.2. Size:188K  jmnic
 2sb859.pdf pdf_icon

2SB859C

JMnic Product Specification Silicon PNP Power Transistors 2SB859 DESCRIPTION With TO-220C package Complement to type 2SD1135 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitt

 8.3. Size:217K  inchange semiconductor
 2sb859.pdf pdf_icon

2SB859C

isc Silicon PNP Power Transistor 2SB859 DESCRIPTION Collector Current I = -4A C Low Collector Saturation Voltage V = -2.0V(Max)@I = -2A CE(sat) C High Collector Power Dissipation Complement to Type 2SD1135 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M

MOSTRAR MÁS

Otros transistores... 2SB857C, 2SB857D, 2SB858, 2SB858B, 2SB858C, 2SB858D, 2SB859, 2SB859B, 8050, 2SB86, 2SB860, 2SB861, 2SB861B, 2SB861C, 2SB862, 2SB863, 2SB863O