2SB860 Datasheet. Equivalente

 ..1. Size:40K  renesas
 2sb860.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 ..2. Size:186K  jmnic
 2sb860.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB860 DESCRIPTION With TO-220C package Complement to type 2SD1137 APPLICATIONS Low frequency power amplifier TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE

 ..3. Size:212K  inchange semiconductor
 2sb860.pdf

isc Silicon PNP Power Transistor 2SB860 DESCRIPTION Collector Current I = -4A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -1A CE(sat) C High Collector Power Dissipation Complement to Type 2SD1137 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M

 9.1. Size:281K  mcc
 2sb861-b.pdf

 9.2. Size:281K  mcc
 2sb861-c.pdf

 9.3. Size:31K  hitachi
 2sb861.pdf

2SB861 Silicon PNP Triple Diffused Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VE

 9.4. Size:156K  jmnic
 2sb868.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB868 DESCRIPTION With TO-220C package Complement to type 2SD960 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

 9.5. Size:163K  jmnic
 2sb869.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB869 DESCRIPTION With TO-220C package Complement to type 2SD961 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

 9.6. Size:186K  jmnic
 2sb861.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB861 DESCRIPTION With TO-220C package Complement to type 2SD1138 APPLICATIONS Low frequency power amplifier color TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 9.7. Size:221K  jmnic
 2sb863.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB863 DESCRIPTION With TO-3P(I) package Complement to type 2SD1148 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) S

 9.8. Size:195K  jmnic
 2sb867.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB867 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD959 Excellent linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PAR

 9.9. Size:194K  cn sptech
 2sb863r 2sb863o.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB863 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1148 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 9.10. Size:217K  inchange semiconductor
 2sb868.pdf

isc Silicon PNP Power Transistor 2SB868 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = -0.5V(Max)@I = -3A CE(sat) C Complement to Type 2SD960 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. A

 9.11. Size:217K  inchange semiconductor
 2sb869.pdf

isc Silicon PNP Power Transistor 2SB869 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = -0.5V(Max)@I = -4A CE(sat) C Complement to Type 2SD961 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. A

 9.12. Size:216K  inchange semiconductor
 2sb861.pdf

isc Silicon PNP Power Transistor 2SB861 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1138 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for low frequency power amplifier color TV vertical deflection output applications ABSOLUTE MAX

 9.13. Size:219K  inchange semiconductor
 2sb863.pdf

isc Silicon PNP Power Transistor 2SB863 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1148 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications

 9.14. Size:217K  inchange semiconductor
 2sb867.pdf

isc Silicon PNP Power Transistor 2SB867 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = -0.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD959 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. A