2SB863R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SB863DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1148APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

JMnic Product Specification Silicon PNP Power Transistors 2SB863 DESCRIPTION With TO-3P(I) package Complement to type 2SD1148 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) S

isc Silicon PNP Power Transistor 2SB863DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1148Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applications

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SB861Silicon PNP Triple DiffusedApplicationLow frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 150 VEmitter to base voltage VE

JMnic Product Specification Silicon PNP Power Transistors 2SB868 DESCRIPTION With TO-220C package Complement to type 2SD960 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SB869 DESCRIPTION With TO-220C package Complement to type 2SD961 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SB861 DESCRIPTION With TO-220C package Complement to type 2SD1138 APPLICATIONS Low frequency power amplifier color TV vertical deflection output PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SB867 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD959 Excellent linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PAR

JMnic Product Specification Silicon PNP Power Transistors 2SB860 DESCRIPTION With TO-220C package Complement to type 2SD1137 APPLICATIONS Low frequency power amplifier TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

isc Silicon PNP Power Transistor 2SB868DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = -0.5V(Max)@I = -3ACE(sat) CComplement to Type 2SD960Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

isc Silicon PNP Power Transistor 2SB869DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = -0.5V(Max)@I = -4ACE(sat) CComplement to Type 2SD961Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

isc Silicon PNP Power Transistor 2SB861DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1138Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for low frequency power amplifier color TVvertical deflection output applicationsABSOLUTE MAX

isc Silicon PNP Power Transistor 2SB867DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = -0.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD959Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

isc Silicon PNP Power Transistor 2SB860DESCRIPTIONCollector Current: I = -4ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -1ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD1137Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M