2SB879 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB879
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
2SB879 Datasheet (PDF)
2sb873 e.pdf

Transistor2SB873Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector
2sb873.pdf

Transistor2SB873Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector
2sb870.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION With TO-220C package Complement to type 2SD866 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol
2sb871.pdf

isc Silicon PNP Power Transistor 2SB871DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -20V(Min)(BR)CEOHigh Speed SwitchingLow Collector Saturation Voltage: V = -0.6V(Max)@I = -10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: BDX40 | KT8143M | KSC900G | 2SC3782F | MGT108V | IMH4A | MPS3826
History: BDX40 | KT8143M | KSC900G | 2SC3782F | MGT108V | IMH4A | MPS3826



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
tip141 | 2n404 | 2n4250 | d882 transistor equivalent | 17n80c3 | bc107 transistor | rjp63g4 datasheet | 2sc1115