2SB903 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon PNP Power Transistors 2SB903 DESCRIPTION With TO-220 package Low collector saturation voltage Large current capacity. Complement to type 2SD1212 APPLICATIONS Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. High-speed switching applications PINNING PIN DES

isc Silicon PNP Power Transistor 2SB903DESCRIPTIONHigh Collector Current: I = -12ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CComplement to Type 2SD1212Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current swi

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2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB908 Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage: V = -1.5 V (max) (I = -3 A) CE (sat) C Complementary to 2SD1223. Maximum Ratings (Ta = 25

2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB907 Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage: V = -1.5 V (max) (I = -2 A) CE (sat) C Complementary to 2SD1222. Maximum Ratings (Ta = 25

2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB905 Power Amplifier Applications Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VCollector-emitter voltage VCEO -150 VEmitter-base voltage VEBO -6 VCollector current IC -1.5 ABase current IB -1.0 ATa = 25C 1.0

2SB906 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) 2SB906 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : V = -1.0 V (typ.) (I = -3 A, I = -0.3 A) CE (sat) C B High power dissipation: P = 20 W (Tc = 25C) C Complementary to 2SD1221 (B) 2SB906 (LB) M

SMD Type TransistorsPNP Transistors2SB906TO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector saturation voltage High power dissipation: PC = 20 W (Tc = 25C) 0.1270.80+0.1 max-0.1 Complementary to 2SD12212.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB901DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWide area of safe operationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for powe

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB904DESCRIPTIONHigh Collector Current:I = -20ACLow Collector Saturation Voltage: V =- 0.5V(Max)@I = 8ACE(sat) CComplement to Type 2SD1213Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers,high-speed inverters

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB900DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -50V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWide area of safe operationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for powe