2SB904 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB904

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO218

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2SB904 datasheet

 ..1. Size:200K  inchange semiconductor
2sb904.pdf pdf_icon

2SB904

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB904 DESCRIPTION High Collector Current I = -20A C Low Collector Saturation Voltage V =- 0.5V(Max)@I = 8A CE(sat) C Complement to Type 2SD1213 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high-speed inverters

 9.1. Size:147K  1
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2SB904

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2SB904

2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB908 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage V = -1.5 V (max) (I = -3 A) CE (sat) C Complementary to 2SD1223. Maximum Ratings (Ta = 25

 9.3. Size:194K  toshiba
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2SB904

2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB907 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage V = -1.5 V (max) (I = -2 A) CE (sat) C Complementary to 2SD1222. Maximum Ratings (Ta = 25

Otros transistores... 2SB90, 2SB900, 2SB901, 2SB902, 2SB903, 2SB903Q, 2SB903R, 2SB903S, BD140, 2SB904Q, 2SB904R, 2SB904S, 2SB905, 2SB905Q, 2SB905R, 2SB905S, 2SB906