2SB906Y Datasheet. Equivalente

 8.1. Size:196K  toshiba
 2sb906.pdf

2SB906 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) 2SB906 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage V = -1.0 V (typ.) (I = -3 A, I = -0.3 A) CE (sat) C B High power dissipation P = 20 W (Tc = 25 C) C Complementary to 2SD1221 (B) 2SB906 (LB) M

 8.2. Size:1308K  kexin
 2sb906.pdf

SMD Type Transistors PNP Transistors 2SB906 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector saturation voltage High power dissipation PC = 20 W (Tc = 25 C) 0.127 0.80+0.1 max -0.1 Complementary to 2SD1221 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta

 9.1. Size:147K  1
 2sb909m 2sb1237.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:200K  toshiba
 2sb908.pdf

2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB908 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage V = -1.5 V (max) (I = -3 A) CE (sat) C Complementary to 2SD1223. Maximum Ratings (Ta = 25

 9.3. Size:194K  toshiba
 2sb907.pdf

2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB907 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage V = -1.5 V (max) (I = -2 A) CE (sat) C Complementary to 2SD1222. Maximum Ratings (Ta = 25

 9.4. Size:210K  toshiba
 2sb905.pdf

2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB905 Power Amplifier Applications Unit mm Complementary to SD1220 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -150 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -6 V Collector current IC -1.5 A Base current IB -1.0 A Ta = 25 C 1.0

 9.5. Size:76K  panasonic
 2sb902.pdf

 9.6. Size:218K  jmnic
 2sb903.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB903 DESCRIPTION With TO-220 package Low collector saturation voltage Large current capacity. Complement to type 2SD1212 APPLICATIONS Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. High-speed switching applications PINNING PIN DES

 9.7. Size:184K  inchange semiconductor
 2sb901.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB901 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -2A CE(sat) C Wide area of safe operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for powe

 9.8. Size:218K  inchange semiconductor
 2sb903.pdf

isc Silicon PNP Power Transistor 2SB903 DESCRIPTION High Collector Current I = -12A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -5A CE(sat) C Complement to Type 2SD1212 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general large-current swi

 9.9. Size:200K  inchange semiconductor
 2sb904.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB904 DESCRIPTION High Collector Current I = -20A C Low Collector Saturation Voltage V =- 0.5V(Max)@I = 8A CE(sat) C Complement to Type 2SD1213 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high-speed inverters

 9.10. Size:183K  inchange semiconductor
 2sb900.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB900 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -50V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -2A CE(sat) C Wide area of safe operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for powe