2SB913
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB913
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 110
V
Tensión colector-emisor (Vce): 110
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 4000
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar 2SB913
2SB913
Datasheet (PDF)
9.1. Size:130K rohm
2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf
TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188
9.2. Size:111K rohm
2sb910m 2sb1238.pdf
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9.3. Size:224K jmnic
2sb919.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB919 DESCRIPTION With TO-220C package Complement to type 2SD1235 Low collector saturation voltage Large current capacity APPLICATIONS Large current switching of relay drivers, high-speed inverters,converters PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplif
9.4. Size:217K inchange semiconductor
2sb919.pdf
isc Silicon PNP Power Transistor 2SB919DESCRIPTIONHigh Collector Current: I = -8ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -3ACE(sat) CComplement to Type 2SD1235Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Otros transistores... 2SB906Y
, 2SB907
, 2SB908
, 2SB909M
, 2SB91
, 2SC2636S
, 2SB911M
, 2SB912
, A940
, 2SB914
, 2SB915
, 2SB916
, 2SB917
, 2SB918
, 2SB919
, 2SB919Q
, 2SB919R
.