2SB919Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB919Q
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SB919Q
2SB919Q Datasheet (PDF)
2sb919.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB919 DESCRIPTION With TO-220C package Complement to type 2SD1235 Low collector saturation voltage Large current capacity APPLICATIONS Large current switching of relay drivers, high-speed inverters,converters PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplif
2sb919.pdf
isc Silicon PNP Power Transistor 2SB919DESCRIPTIONHigh Collector Current: I = -8ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -3ACE(sat) CComplement to Type 2SD1235Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf
TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188
2sb910m 2sb1238.pdf
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Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC5370O
History: 2SC5370O
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050