2SB97 Todos los transistores

 0.1. Size:73K  panasonic
 2sb970.pdf

 0.2. Size:39K  panasonic
 2sb976 e.pdf

Transistor 2SB976 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm For DC-DC converter 5.0 0.2 4.0 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 27

 0.3. Size:41K  panasonic
 2sb970 e.pdf

Transistor 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings

 0.4. Size:35K  panasonic
 2sb976.pdf

Transistor 2SB976 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm For DC-DC converter 5.0 0.2 4.0 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 27

 0.5. Size:82K  panasonic
 2sb977.pdf

 0.6. Size:885K  kexin
 2sb970.pdf

SMD Type Transistors PNP Transistors 2SB970 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 Low collector to emitter saturation voltage VCE(sat). For low-voltage output amplification 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage

 0.7. Size:190K  inchange semiconductor
 2sb975.pdf

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB975 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -3A FE C Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -3A CE(sat) C Complement to Type 2SD1309 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power

 0.8. Size:220K  inchange semiconductor
 2sb979.pdf

isc Silicon PNP Power Transistor 2SB979 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

 0.9. Size:189K  inchange semiconductor
 2sb974.pdf

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB974 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -2A FE C Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -2A CE(sat) C Complement to Type 2SD1308 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power

 0.10. Size:85K  inchange semiconductor
 2sb975-220.pdf

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB975 DESCRIPTION With TO-220 package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYM