2SB983 Todos los transistores

 ..1. Size:213K  inchange semiconductor
 2sb983.pdf

isc Silicon PNP Power Transistor 2SB983 DESCRIPTION High Switching Time Low Collector Saturation Voltage V = -0.4V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1345 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverters, converters Controllers for DC motor, pulse motor Switching power s

 9.1. Size:111K  sanyo
 2sb986.pdf

 9.2. Size:96K  sanyo
 2sb985.pdf

 9.3. Size:183K  nec
 2sb984.pdf

 9.4. Size:41K  panasonic
 2sb987 e.pdf

Transistor 2SB987 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1211 5.9 0.2 4.9 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. 0.7 0.1 Makes up a complementary pair with 2SD1211, which is opti- mum for the pre-driver stage of a 40 to 60W output ampl

 9.5. Size:495K  no
 2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf

 9.6. Size:506K  jiangsu
 2sb985.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SB985 TRANSISTOR (PNP) 1. EMITTER FEATURES Power Supplies, Relay Drivers, Lamp Drivers 2. COLLECTOR Adoption of FBET,MBIT Processes Low Saturation Voltage 3. BASE Large Current Capacity and Wide ASO Equivalent Circuit B985=Device code B985 Solid dot = Green moldin

 9.7. Size:155K  jmnic
 2sb988.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB988 DESCRIPTION With TO-220C package Low collector saturation voltage APPLICATIONS For vertical output and general purpose applicaitons PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYM

 9.8. Size:250K  lge
 2sb985.pdf

2SB985 TO-92MOD Transistor (PNP) 1. EMITTER TO-92MOD 1 2 2. COLLECTOR 3 3. BASE Features 5.800 Power supplies, relay drivers, lamp drivers 6.200 Adoption of FBET,MBIT processes Low saturation voltage 8.400 8.800 Large current capacity and wide ASO 0.900 1.100 0.400 0.600 MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.800 14.200 Symbol Parameter Va

 9.9. Size:209K  wietron
 2sb985.pdf

2SB985 PNP General Purpose Transistors P b Lead(Pb)-Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage -50 VCEO V VCBO Collector-Base Voltage V -60 VEBO Emitter-Base Voltage V -6.0 IC Collector Current - Continuous -3.0 mA Total Device Dissipation PD 0.9 mW TA=25 C Tj C Junction Temperatur

 9.10. Size:194K  lzg
 2sb985 3ca985.pdf

2SB985(3CA985) PNP /SILICON PNP TRANSISTOR , , Purpose Power supplies, relay drivers, lamp drivers, electrical equipment. , Features Low saturation voltage, large current capacity and wide ASO. /Absolute Maximum Ratings(Ta=25

 9.11. Size:216K  inchange semiconductor
 2sb989.pdf

isc Silicon PNP Power Transistor 2SB989 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = -1.7V(Max)@ (I = -3A, I = -0.3A) CE(sat) C B Complement to Type 2SD1352 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

 9.12. Size:214K  inchange semiconductor
 2sb986.pdf

isc Silicon PNP Power Transistor 2SB986 DESCRIPTION High Collector Current-I = -4.0A C Low Saturation Voltage - V = -0.5V(Max)@ I = -2A, I = -0.1A CE(sat) C B Good Linearity of h FE Complement to Type 2SD1348 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies, relay drivers, lamp drivers, electr

 9.13. Size:220K  inchange semiconductor
 2sb980.pdf

isc Silicon PNP Power Transistor 2SB980 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

 9.14. Size:215K  inchange semiconductor
 2sb988.pdf

isc Silicon PNP Power Transistor 2SB988 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purp

 9.15. Size:219K  inchange semiconductor
 2sb982.pdf

isc Silicon PNP Power Transistor 2SB982 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

 9.16. Size:219K  inchange semiconductor
 2sb981.pdf

isc Silicon PNP Power Transistor 2SB981 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll