2SB985 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB985
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 39 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SB985
2SB985 Datasheet (PDF)
2sb985.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate TransistorsTO-92MOD 2SB985 TRANSISTOR (PNP)1. EMITTERFEATURES Power Supplies, Relay Drivers, Lamp Drivers2. COLLECTOR Adoption of FBET,MBIT Processes Low Saturation Voltage3. BASE Large Current Capacity and Wide ASO Equivalent Circuit B985=Device code B985 Solid dot = Green moldin
2sb985.pdf
2SB985 TO-92MOD Transistor (PNP)1. EMITTER TO-92MOD1 22. COLLECTOR 3 3. BASE Features5.800 Power supplies, relay drivers, lamp drivers 6.200 Adoption of FBET,MBIT processes Low saturation voltage 8.4008.800 Large current capacity and wide ASO 0.9001.1000.4000.600MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.80014.200Symbol Parameter Va
2sb985.pdf
2SB985PNP General Purpose TransistorsP b Lead(Pb)-Free1231.EMITTER3.BASE2.COLLECTORTO-92MODMAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage-50VCEOVVCBOCollector-Base Voltage V-60VEBOEmitter-Base Voltage V-6.0ICCollector Current - Continuous -3.0 mATotal Device DissipationPD 0.9mWTA=25CTj CJunction Temperatur
2sb985 3ca985.pdf
2SB985(3CA985) PNP /SILICON PNP TRANSISTOR :,, Purpose: Power supplies, relay drivers, lamp drivers, electrical equipment. :, Features:Low saturation voltage, large current capacity and wide ASO. /Absolute Maximum Ratings(Ta=25
2sb987 e.pdf
Transistor2SB987Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD12115.9 0.2 4.9 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.0.7 0.1Makes up a complementary pair with 2SD1211, which is opti-mum for the pre-driver stage of a 40 to 60W output ampl
2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf
2sb988.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB988 DESCRIPTION With TO-220C package Low collector saturation voltage APPLICATIONS For vertical output and general purpose applicaitons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYM
2sb989.pdf
isc Silicon PNP Power Transistor 2SB989DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -1.7V(Max)@ (I = -3A, I = -0.3A)CE(sat) C BComplement to Type 2SD1352Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
2sb986.pdf
isc Silicon PNP Power Transistor 2SB986DESCRIPTIONHigh Collector Current-I = -4.0ACLow Saturation Voltage -: V = -0.5V(Max)@ I = -2A, I = -0.1ACE(sat) C BGood Linearity of hFEComplement to Type 2SD1348Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies, relay drivers, lamp drivers,electr
2sb980.pdf
isc Silicon PNP Power Transistor 2SB980DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
2sb983.pdf
isc Silicon PNP Power Transistor 2SB983DESCRIPTIONHigh Switching TimeLow Collector Saturation Voltage: V = -0.4V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1345Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverters, convertersControllers for DC motor, pulse motorSwitching power s
2sb988.pdf
isc Silicon PNP Power Transistor 2SB988DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp
2sb982.pdf
isc Silicon PNP Power Transistor 2SB982DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
2sb981.pdf
isc Silicon PNP Power Transistor 2SB981DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
