2SB986S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor 2SB986DESCRIPTIONHigh Collector Current-I = -4.0ACLow Saturation Voltage -: V = -0.5V(Max)@ I = -2A, I = -0.1ACE(sat) C BGood Linearity of hFEComplement to Type 2SD1348Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies, relay drivers, lamp drivers,electr

Transistor2SB987Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD12115.9 0.2 4.9 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.0.7 0.1Makes up a complementary pair with 2SD1211, which is opti-mum for the pre-driver stage of a 40 to 60W output ampl

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate TransistorsTO-92MOD 2SB985 TRANSISTOR (PNP)1. EMITTERFEATURES Power Supplies, Relay Drivers, Lamp Drivers2. COLLECTOR Adoption of FBET,MBIT Processes Low Saturation Voltage3. BASE Large Current Capacity and Wide ASO Equivalent Circuit B985=Device code B985 Solid dot = Green moldin

JMnic Product Specification Silicon PNP Power Transistors 2SB988 DESCRIPTION With TO-220C package Low collector saturation voltage APPLICATIONS For vertical output and general purpose applicaitons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYM

2SB985 TO-92MOD Transistor (PNP)1. EMITTER TO-92MOD1 22. COLLECTOR 3 3. BASE Features5.800 Power supplies, relay drivers, lamp drivers 6.200 Adoption of FBET,MBIT processes Low saturation voltage 8.4008.800 Large current capacity and wide ASO 0.9001.1000.4000.600MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.80014.200Symbol Parameter Va

2SB985PNP General Purpose TransistorsP b Lead(Pb)-Free1231.EMITTER3.BASE2.COLLECTORTO-92MODMAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage-50VCEOVVCBOCollector-Base Voltage V-60VEBOEmitter-Base Voltage V-6.0ICCollector Current - Continuous -3.0 mATotal Device DissipationPD 0.9mWTA=25CTj CJunction Temperatur

2SB985(3CA985) PNP /SILICON PNP TRANSISTOR :,, Purpose: Power supplies, relay drivers, lamp drivers, electrical equipment. :, Features:Low saturation voltage, large current capacity and wide ASO. /Absolute Maximum Ratings(Ta=25

isc Silicon PNP Power Transistor 2SB989DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -1.7V(Max)@ (I = -3A, I = -0.3A)CE(sat) C BComplement to Type 2SD1352Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

isc Silicon PNP Power Transistor 2SB980DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon PNP Power Transistor 2SB983DESCRIPTIONHigh Switching TimeLow Collector Saturation Voltage: V = -0.4V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1345Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverters, convertersControllers for DC motor, pulse motorSwitching power s

isc Silicon PNP Power Transistor 2SB988DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp

isc Silicon PNP Power Transistor 2SB982DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon PNP Power Transistor 2SB981DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll