2SB991 Todos los transistores

 

2SB991 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB991

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 180 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 140

Encapsulados: TO220

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2SB991 datasheet

 ..1. Size:186K  inchange semiconductor
 2sb991.pdf pdf_icon

2SB991

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB991 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -180V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -0.5A CE(sat) C Wide area of safe operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequen

 9.1. Size:216K  inchange semiconductor
 2sb996.pdf pdf_icon

2SB991

isc Silicon PNP Power Transistor 2SB996 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 20 25W high-fidelity audio frequency amplifier output stage. ABSOL

 9.2. Size:216K  inchange semiconductor
 2sb992.pdf pdf_icon

2SB991

isc Silicon PNP Power Transistor 2SB992 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.5V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1362 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre

 9.3. Size:216K  inchange semiconductor
 2sb993.pdf pdf_icon

2SB991

isc Silicon PNP Power Transistor 2SB993 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.4V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1363 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre

MOSTRAR MÁS

Otros transistores... 2SB986R , 2SB986S , 2SB986T , 2SB986U , 2SB987 , 2SB988 , 2SB989 , 2SB99 , BC549 , 2SB992 , 2SB993 , 2SB994 , 2SB995 , 2SB996 , 2SB997 , 2SB998 , 2SB999 .

History: EN3502 | H772 | BTN2369A3

 

 

 

 

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