2SB994 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB994
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 1.5 MHz
   Ganancia de corriente contínua (hfe): 140
   Paquete / Cubierta: TO126

Búsqueda de reemplazo de transistor bipolar 2SB994

2SB994 Datasheet (PDF)

..1. Size:216K inchange semiconductor
2sb994.pdf

isc Silicon PNP Power Transistor 2SB994DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ I = -3ACE(sat) CComplement to Type 2SD1354Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f

9.1. Size:216K inchange semiconductor
2sb996.pdf

isc Silicon PNP Power Transistor 2SB996DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1356Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 20~25W high-fidelity audio frequencyamplifier output stage.ABSOL

9.2. Size:216K inchange semiconductor
2sb992.pdf

isc Silicon PNP Power Transistor 2SB992DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = -0.5V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1362Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh curre

9.3. Size:216K inchange semiconductor
2sb993.pdf

isc Silicon PNP Power Transistor 2SB993DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = -0.4V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1363Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh curre

9.4. Size:186K inchange semiconductor
2sb991.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB991DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -180V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -0.5ACE(sat) CWide area of safe operationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequen

9.5. Size:218K inchange semiconductor
2sb995.pdf

isc Silicon PNP Power Transistor 2SB995DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -2.0V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1355Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 30W high-fidelity a

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: AF114 | AFY77

Liste

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