2SB994 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB994

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1.5 MHz

Ganancia de corriente contínua (hFE): 140

Encapsulados: TO126

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2SB994 datasheet

 ..1. Size:216K  inchange semiconductor
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2SB994

isc Silicon PNP Power Transistor 2SB994 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = -1.0V(Max)@ I = -3A CE(sat) C Complement to Type 2SD1354 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f

 9.1. Size:216K  inchange semiconductor
 2sb996.pdf pdf_icon

2SB994

isc Silicon PNP Power Transistor 2SB996 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 20 25W high-fidelity audio frequency amplifier output stage. ABSOL

 9.2. Size:216K  inchange semiconductor
 2sb992.pdf pdf_icon

2SB994

isc Silicon PNP Power Transistor 2SB992 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.5V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1362 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre

 9.3. Size:216K  inchange semiconductor
 2sb993.pdf pdf_icon

2SB994

isc Silicon PNP Power Transistor 2SB993 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.4V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1363 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre

MOSTRAR MÁS

Otros transistores... 2SB986U, 2SB987, 2SB988, 2SB989, 2SB99, 2SB991, 2SB992, 2SB993, BC556, 2SB995, 2SB996, 2SB997, 2SB998, 2SB999, 2SC100, 2SC1000, 2SC1000GTM