2SC1170 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1170
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1200 V
Tensión colector-emisor (Vce): 500 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 2 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO3
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2SC1170 datasheet
2sc1170.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALU
2sc1170.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1170 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol
2sc1170a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMET
2sc1173.pdf
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Otros transistores... 2SC1165, 2SC1166, 2SC1167, 2SC1168, 2SC1169, 2SC116H, 2SC116T, 2SC117, D882, 2SC1170A, 2SC1170B, 2SC1171, 2SC1172, 2SC1172A, 2SC1172B, 2SC1173, 2SC1173G
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