2SC1200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1200
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 180 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 800 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: 2-3B1B
Búsqueda de reemplazo de transistor bipolar 2SC1200
2SC1200 Datasheet (PDF)
r07ds0431ej 2sc1213a-1.pdf
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Preliminary Datasheet R07DS0431EJ03002SC1213, 2SC1213A (Previous: REJ03G0684-0200)Rev.3.00Silicon NPN Epitaxial Jun 07, 2011Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item S
r07ds0432ej 2sc1213ak-1.pdf
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Preliminary Datasheet R07DS0432EJ03002SC1213A(K) (Previous: REJ03G0685-0200)Rev.3.00Silicon NPN Epitaxial Jun 07, 2011Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollec
2sc1215 e.pdf
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Transistor2SC1215Silicon NPN epitaxial planer typeFor high-frequency (VHF band) amplification and oscillationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCEO 20 VEmitter to base
2sc1215.pdf
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Transistor2SC1215Silicon NPN epitaxial planer typeFor high-frequency (VHF band) amplification and oscillationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCEO 20 VEmitter to base
2sc1213.pdf
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2SC1213, 2SC1213ASilicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA673 and 2SA673AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1213, 2SC1213AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SC1213 2SC1213A UnitCollector to base voltage VCBO 35 50 VCollector to emitter voltage VCEO 35 50 VEmitter to base voltage
2sc1214.pdf
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2SC1214Silicon NPN EpitaxialADE-208-1050 (Z)1st. EditionMar. 2001ApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1214Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 4VCollector current IC 500 mACollec
2sc1212.pdf
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2SC1212, 2SC1212ASilicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SC1212 2SC1212A UnitCollector to base voltage VCBO 50 80 VCollector to emitter voltage VCEO 50 80 VEmitter to base voltage VEBO 44VCollector current IC 11ACollector power diss
2sc1213-2sc1213a.pdf
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2SC1213, 2SC1213A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SA673 and 2SA673A 1Emitter 1112Collector 2223Base 333CLASSIFICATION OF hFE(1) JA DProduct-Rank 2SC1213-B 2SC1213-C 2SC1213-D
2sc1252.pdf
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2SC1252 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2SC1252 is a High Frequency PACKAGE STYLE TO-39 Transistor, Designed for Wide Band Amplifier Applications up to 500 MHz. FEATURES INCLUDE: High Gain -17 dB Typ. @ 200 MHz Low NF - 3.0 dB Typ. @ 200 MHz Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 45 V VCE 25 V PDISS 5 W @ TC = 25 C
2sc1251.pdf
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2SC1251NPN SILICON RF POWER TRANSISTORDESCRIPTION:The 2SC1251 is a Common EmitterDevice Designed for High LinearityClass A Amplifiers up to 2.0 GHz.PACKAGE STYLE .204 4L STUDFEATURES INCLUDE: Direct Replacement for NE74020 High Gain - 10 dB min. @ 1.0 GHz Gold MetalizationMAXIMUM RATINGSIC 300 mAVCB 45 VPDISS 5.3W @ TC = 25 OCTJ -65 OC to +200 OCTSTG -65
2sc1213a.pdf
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. EMITTER Low Frequency Amplifier2. COLLECTOR Complementary Pair with 2SA673A3. BASE Equivalent Circuit
2sc1212.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SC121
2sc1235.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1235DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in lined-operated color TV chroma outputcircuits and sound output circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
2sc1226 2sc1226a.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A DESCRIPTION With TO-202 package Complement to type 2SA699/699A APPLICATIONS For medium power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMET
2sc1212 2sc1212a.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS V
2sc1295.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1295DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor TV horizontal deflection output applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col
2sc1212a.pdf
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isc Silicon NPN Power Transistor 2SC1212ADESCRIPTIONHigh Collector Current -I = 1ACCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sc1227.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1227DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor clocked voltage convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
2sc1212.pdf
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isc Silicon NPN Power Transistor 2SC1212DESCRIPTIONHigh Collector Current I = 1ACCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .