2SC1212A Todos los transistores

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS V

isc Silicon NPN Power Transistor 2SC1212A DESCRIPTION High Collector Current -I = 1A C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEBO 44V Collector current IC 11A Collector power diss

JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC121

isc Silicon NPN Power Transistor 2SC1212 DESCRIPTION High Collector Current I = 1A C Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET