2SC1212B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1212B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 8 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 160 MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar 2SC1212B
2SC1212B Datasheet (PDF)
2sc1212.pdf
2SC1212, 2SC1212ASilicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SC1212 2SC1212A UnitCollector to base voltage VCBO 50 80 VCollector to emitter voltage VCEO 50 80 VEmitter to base voltage VEBO 44VCollector current IC 11ACollector power diss
2sc1212.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SC121
2sc1212 2sc1212a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS V
2sc1212a.pdf
isc Silicon NPN Power Transistor 2SC1212ADESCRIPTIONHigh Collector Current -I = 1ACCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sc1212.pdf
isc Silicon NPN Power Transistor 2SC1212DESCRIPTIONHigh Collector Current I = 1ACCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: SRC1211E
History: SRC1211E
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050