2SC1212B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC1212B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 8 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 160 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO126

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2SC1212B datasheet

 7.1. Size:29K  hitachi
 2sc1212.pdf pdf_icon

2SC1212B

2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEBO 44V Collector current IC 11A Collector power diss

 7.2. Size:179K  jmnic
 2sc1212.pdf pdf_icon

2SC1212B

JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC121

 7.3. Size:146K  inchange semiconductor
 2sc1212 2sc1212a.pdf pdf_icon

2SC1212B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS V

 7.4. Size:214K  inchange semiconductor
 2sc1212a.pdf pdf_icon

2SC1212B

isc Silicon NPN Power Transistor 2SC1212A DESCRIPTION High Collector Current -I = 1A C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

MOSTRAR MÁS

Otros transistores... 2SC1209, 2SC121, 2SC1210, 2SC1211, 2SC1212, 2SC1212A, 2SC1212AB, 2SC1212AC, D882P, 2SC1212C, 2SC1213, 2SC1213A, 2SC1214, 2SC1214B, 2SC1215, 2SC1215S, 2SC1215T