2SC1352 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1352
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO39
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2SC1352 datasheet
2sc1359 e.pdf
Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA838 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector t
2sc1359.pdf
Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA838 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector t
2sc1358.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1358 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For large screen color deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto
Otros transistores... 2SC1348, 2SC1348-2, 2SC1348-3, 2SC1349, 2SC1349F, 2SC135, 2SC1350, 2SC1351, 431, 2SC1352F, 2SC1353, 2SC1354, 2SC1355, 2SC1355F, 2SC1356, 2SC1356F, 2SC1358
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