2SC1358A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1358A 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 500 V
Corriente del colector DC máxima (Ic): 5.5 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 5
Encapsulados: TO3
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2SC1358A datasheet
2sc1358.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1358 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For large screen color deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto
2sc1359 e.pdf
Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA838 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector t
2sc1359.pdf
Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA838 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector t
Otros transistores... 2SC1352F, 2SC1353, 2SC1354, 2SC1355, 2SC1355F, 2SC1356, 2SC1356F, 2SC1358, 2SA1013, 2SC1359, 2SC136, 2SC1360, 2SC1360A, 2SC1361, 2SC1362, 2SC1363, 2SC1364
Parámetros del transistor bipolar y su interrelación.
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