2SC1365
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1365
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5
W
Tensión colector-base (Vcb): 45
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1700
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO39
Búsqueda de reemplazo de transistor bipolar 2SC1365
2SC1365
Datasheet (PDF)
8.1. Size:37K panasonic
2sc1360.pdf
Transistor2SC1360, 2SC1360ASilicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Large collector power dissipation PC.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to 2SC1360 50VCBO Vbase voltage 2SC1360A 60Collector to 2S
8.2. Size:41K panasonic
2sc1360 e.pdf
Transistor2SC1360, 2SC1360ASilicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Large collector power dissipation PC.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to 2SC1360 50VCBO Vbase voltage 2SC1360A 60Collector to 2S
8.3. Size:198K lzg
2sc1360-a 3da1360-a.pdf
2SC1360(3DA1360) 2SC1360A(3DA1360A) NPN /SILICON NPN TRANSISTOR : Purpose: Picture IF amplifier . :, Features: High f , large P . T C/Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SC1360 50 VCBO V 2SC1360A 60 2SC1360
8.4. Size:177K inchange semiconductor
2sc1367.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1367DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
8.5. Size:184K inchange semiconductor
2sc1368.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1368DESCRIPTIONHigh Collector Current I = 1.5ACCollector-Emitter Breakdown Voltage-: V = 25V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.AB
Otros transistores... 2SA1803O
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