2SC1427 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1427
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 30 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1000 MHz
Capacitancia de salida (Cc): 0.7 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: TO236
Búsqueda de reemplazo de 2SC1427
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2SC1427 datasheet
9.1. Size:51K panasonic
2sc1473 e.pdf 
Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit mm 2SC1473 complementary to 2SA1018 5.0 0.2 4.0 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector t
9.2. Size:47K panasonic
2sc1473.pdf
Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit mm 2SC1473 complementary to 2SA1018 5.0 0.2 4.0 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector t
9.3. Size:47K hitachi
2sc1472.pdf
2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 1 2. Collector 3. Base 3 2 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector peak current
9.5. Size:104K savantic
2sc1402.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI
9.6. Size:30K wingshing
2sc1413a.pdf
NPN TRIPLE DIFFUSED 2SC1413A PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current
9.8. Size:180K inchange semiconductor
2sc1444.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1444 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 8
9.9. Size:185K inchange semiconductor
2sc1447.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1447 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.10. Size:202K inchange semiconductor
2sc1403.pdf
isc Silicon NPN Power Transistor 2SC1403 DESCRIPTION Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Bas
9.11. Size:205K inchange semiconductor
2sc1413a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1413A DESCRIPTION High Collector-base breakdown voltage 1500V Low saturation voltage@5A Large area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the horizontal output stage in power-transformer-less television receivers. ABSOLUTE MAXIMU
9.12. Size:177K inchange semiconductor
2sc1441.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1441 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
9.13. Size:183K inchange semiconductor
2sc1449.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1449 DESCRIPTION High Collector Current I = 2.0A C Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. AB
9.14. Size:179K inchange semiconductor
2sc1456.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1456 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 3
9.15. Size:102K inchange semiconductor
2sc1402.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI
9.16. Size:184K inchange semiconductor
2sc1446.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1446 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.17. Size:177K inchange semiconductor
2sc1431.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1431 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
9.18. Size:176K inchange semiconductor
2sc1454.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1454 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
9.19. Size:185K inchange semiconductor
2sc1418.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1418 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.20. Size:179K inchange semiconductor
2sc1450.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1450 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1
9.21. Size:184K inchange semiconductor
2sc1448.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1448 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.22. Size:180K inchange semiconductor
2sc1445.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1445 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1
9.23. Size:177K inchange semiconductor
2sc1433.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1433 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
9.24. Size:127K inchange semiconductor
2sc1413.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI
9.25. Size:185K inchange semiconductor
2sc1419.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1419 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.26. Size:178K inchange semiconductor
2sc1469.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1469 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
9.27. Size:177K inchange semiconductor
2sc1440.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1440 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
Otros transistores... 2SC1420
, 2SC1421
, 2SC1422
, 2SC1422F
, 2SC1423
, 2SC1424
, 2SC1425
, 2SC1426
, BD333
, 2SC1428
, 2SC1429
, 2SC143
, 2SC1430
, 2SC1430-1
, 2SC1430-2
, 2SC1431
, 2SC1431-1
.
