2SC1466 Todos los transistores

 8.1. Size:178K  inchange semiconductor
 2sc1469.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1469 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 9.1. Size:51K  panasonic
 2sc1473 e.pdf

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit mm 2SC1473 complementary to 2SA1018 5.0 0.2 4.0 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector t

 9.2. Size:47K  panasonic
 2sc1473.pdf

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit mm 2SC1473 complementary to 2SA1018 5.0 0.2 4.0 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector t

 9.3. Size:47K  hitachi
 2sc1472.pdf

2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 1 2. Collector 3. Base 3 2 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector peak current

 9.4. Size:126K  no
 2sc1475.pdf

 9.5. Size:340K  no
 2sc1426.pdf

 9.6. Size:104K  savantic
 2sc1402.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

 9.7. Size:30K  wingshing
 2sc1413a.pdf

NPN TRIPLE DIFFUSED 2SC1413A PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current

 9.8. Size:66K  wingshing
 2sc1454.pdf

 9.9. Size:180K  inchange semiconductor
 2sc1444.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1444 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 8

 9.10. Size:185K  inchange semiconductor
 2sc1447.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1447 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.11. Size:202K  inchange semiconductor
 2sc1403.pdf

isc Silicon NPN Power Transistor 2SC1403 DESCRIPTION Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Bas

 9.12. Size:205K  inchange semiconductor
 2sc1413a.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1413A DESCRIPTION High Collector-base breakdown voltage 1500V Low saturation voltage@5A Large area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the horizontal output stage in power-transformer-less television receivers. ABSOLUTE MAXIMU

 9.13. Size:177K  inchange semiconductor
 2sc1441.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1441 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 9.14. Size:183K  inchange semiconductor
 2sc1449.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1449 DESCRIPTION High Collector Current I = 2.0A C Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. AB

 9.15. Size:179K  inchange semiconductor
 2sc1456.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1456 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 3

 9.16. Size:102K  inchange semiconductor
 2sc1402.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

 9.17. Size:184K  inchange semiconductor
 2sc1446.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1446 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.18. Size:177K  inchange semiconductor
 2sc1431.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1431 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 9.19. Size:176K  inchange semiconductor
 2sc1454.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1454 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 9.20. Size:185K  inchange semiconductor
 2sc1418.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1418 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.21. Size:179K  inchange semiconductor
 2sc1450.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1450 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1

 9.22. Size:184K  inchange semiconductor
 2sc1448.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1448 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.23. Size:180K  inchange semiconductor
 2sc1445.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1445 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1

 9.24. Size:177K  inchange semiconductor
 2sc1433.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1433 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 9.25. Size:127K  inchange semiconductor
 2sc1413.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

 9.26. Size:185K  inchange semiconductor
 2sc1419.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1419 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.27. Size:177K  inchange semiconductor
 2sc1440.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1440 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage