2SC1471 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1471
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 30 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Capacitancia de salida (Cc): 1400 pF
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2SC1471
2SC1471 Datasheet (PDF)
2sc1473 e.pdf
Transistor2SC1473, 2SC1473ASilicon NPN triple diffusion planer typeFor general amplificationUnit: mm2SC1473 complementary to 2SA10185.0 0.2 4.0 0.22SC1473A complementary to 2SA1767FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector t
2sc1473.pdf
Transistor2SC1473, 2SC1473ASilicon NPN triple diffusion planer typeFor general amplificationUnit: mm2SC1473 complementary to 2SA10185.0 0.2 4.0 0.22SC1473A complementary to 2SA1767FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector t
2sc1472.pdf
2SC1472(K)Silicon NPN Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92 (1)321. Emitter12. Collector3. Base3212SC1472 (K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 10 VCollector current IC 300 mACollector peak current
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
