2SC1506 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Silicon Power Transistor2SC1505NPN 2SC1505 (1.5 W)

Transistor2SC1509Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA7775.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo

Transistor2SC1509Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA7775.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1

JMnic Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outl

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PAR

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1504DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 4

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501 DESCRIPTION With TO-126 package High breakdown voltage Large power dissipation APPLICATIONS For medium power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base

isc Silicon NPN Power Transistor 2SC1505DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 50mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV chroma outputCircuits and sound output circui

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1507DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 50mACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color T

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220F package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.