2SC1558 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders Unit mm For DC-DC converter 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol

Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0794, 2SA0794A 3.16 0.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier TO-126B package which requires no insulati

Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit mm For small TV video output 5.9 0.2 4.9 0.2 Complementary to 2SC1573 and 2SA879 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) 0.7 0.1 Parameter Symbol Ratings Unit 2.54 0

Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA777 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo

Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit mm For small TV video output 5.9 0.2 4.9 0.2 Complementary to 2SC1573 and 2SA879 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) 0.7 0.1 Parameter Symbol Ratings Unit 2.54 0

Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0900 3.16 0.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances and high efficiency with a low- voltage power supply TO-126B package which incorporate

Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders Unit mm For DC-DC converter 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol

Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA777 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo

2SC1515(K) Silicon NPN Triple Diffused Application High voltage switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1515 (K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCES 200 V VCEO 150 V Emitter to base voltage VEBO 5V Collector current IC 50 mA Collector power dissipat

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1520 DESCRIPTION With TO-202 package High voltage High transition frequency APPLICATIONS For color TV chroma output and video output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1

JMnic Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outl

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PAR

2SC1573(3DA1573) 2SC1573A(3DA1573A) NPN /SILICON NPN TRANSISTOR Purpose General amplifier and video frequency output in small screen TV. ,f , 2SA879(3CA879) T Features High V , high f ; Complementary pair with 2SA879(3CA879). CEO T /Absolute maximum rati

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1504 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 4

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION With TO-126 package Complement to type 2SA794/794A High collector to emitter voltage VCEO APPLICATIONS For low-frequency high power driver applications Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1580 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1514 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= 300V(Min) Good Linearity of hFE Low Saturation Voltage APPLICATIONS Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMET

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1576 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1579 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

isc Silicon NPN Power Transistor 2SC1567 DESCRIPTION Collector-Emitter Breakdown Voltage V = 100V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA794 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency high power driver. Optimum for the driver stage of low-frequency and 40W to 100W output

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1516 DESCRIPTION High Collector Current I = 1.5A C Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. AB

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501 DESCRIPTION With TO-126 package High breakdown voltage Large power dissipation APPLICATIONS For medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1586 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

isc Silicon NPN Power Transistor 2SC1505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 50mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV chroma output Circuits and sound output circui

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1585 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1568 DESCRIPTION Silicon NPN epitaxial planar type Low Collector-Emitter Breakdown Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage type medium output power amplifications ABSOLUTE MAXIMUM

isc Silicon NPN PowerTransistor 2SC1584 DESCRIPTION High Power Dissipation- P = 150W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Complement to Type 2SA907 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SC1569 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO DC Current Gain- h = 40-170 @I = 50mA, V = 10V FE C CE High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output applications. ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1507 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 50mA CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1520 DESCRIPTION With TO-202 package High voltage High transition frequency APPLICATIONS For color TV chroma output and video output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=2

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1577 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220F package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.